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        Data Sheet www.rohm.com ? 2011 ROHM Co., Ltd. All rights reserved. Super Fast Recovery Diode RF1005TF6S ?Series ?Dimensions (Unit : mm) ?Structure Standard Fast Recovery ?Applications General rectification ?Features 1)Single type.(TO-220) 2)High switching speed ?Construction Silicon epitaxial planer ?Absolute maximum ratings (Tc=25 ?C) Symbol VRM VR Average rectified forward current Io Tj Tstg ?Electrical characteristics (Tj=25 ?C) Symbol Forward voltage VF Reverse current IR Reverse recovery time(*) trr Thermal resistance(*) Rth(j-c) (*) : Design assurance without measurement. 150 ?55 to ?150 Junction temperature Storage temperature VR=600V - 1.4 Parameter Min. Typ. Conditions IF=10A 1.7 - 0.05 10 IF=0.5A,IR=1A,Irr=0.25×IR junction to case -3040ns - - 3.5 Unit one cycle peak value, Tj=25?C Forward current surge peak IFSM 100 A 60Hz half sin wave, Non-repetitive Max. ?C ?C Parameter Conditions Limits Unit Repetitive peak reverse voltage Duty ? 0.5 600 V Reverse voltage Direct voltage 600 V 60Hz half sin wave, Resistance load, Tc=78?C 10 A V μA ?C/ W (1) (3) Manufacture Year Manufacture Week ROHM : TO220NFM (1) (3) 10 +0.3 ?0.1 +0.4 ? 0.2 0.62 +0.1?0.05 2.6 ±0.5 2.8+0.2?0.1 4.5+0.3 ?0.1 2.54 ±0.5 3.2 ±0.2 2.54 ±0.5 0.76 1.12 1.02 14 15 ± 0.5 12 ± 0.2 8 1.6MAX ± 0.2 2.3 ± 0.3 1/3 2011.05 - Rev.A |